Technical parameters/drain source resistance: 22 mΩ
Technical parameters/polarity: Dual N
Technical parameters/dissipated power: 1.4 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 6.4A
Technical parameters/rise time: 10 ns
Technical parameters/rated power (Max): 1.4 W
Technical parameters/descent time: 9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1400 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7842DP-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
Trans MOSFET N-CH 30V 6.3A 8Pin PowerPAK SO T/R
|
||
SI7842DP-T1-E3
|
VISHAY | 类似代替 | SO-8 |
Trans MOSFET N-CH 30V 6.3A 8Pin PowerPAK SO T/R
|
||
|
SI7842DP-T1-E3
|
Vishay Semiconductor | 类似代替 | SO |
Trans MOSFET N-CH 30V 6.3A 8Pin PowerPAK SO T/R
|
||
SI7842DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET DL N-CH 30V PPAK 8-SOIC
|
||
SI7872DP-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH D-S 30V 8-SOIC
|
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