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Model SI7842DP-T1-E3
Description Trans MOSFET N-CH 30V 6.3A 8Pin PowerPAK SO T/R
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Brand: Vishay Semiconductor
Packaging SO
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3031) Minimum order quantity(1)
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Technical parameters/drain source resistance: 30.0 mΩ

Technical parameters/polarity: Dual N-Channel

Technical parameters/dissipated power: 1.40 W

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 6.30 A

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO

External dimensions/packaging: SO

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7842DP-T1-GE3 SI7842DP-T1-GE3 Vishay Siliconix 类似代替 SO-8
MOSFET DL N-CH 30V PPAK 8-SOIC
PDF
SI7872DP-T1-E3 SI7872DP-T1-E3 Vishay Intertechnology 类似代替 SO-8
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.017Ω; ID 6.4A; PowerPAK SO-8; PD 1.4W
PDF
SI7872DP-T1-E3 SI7872DP-T1-E3 Vishay Siliconix 类似代替 SO-8
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.017Ω; ID 6.4A; PowerPAK SO-8; PD 1.4W
PDF
SI7872DP-T1-E3 SI7872DP-T1-E3 VISHAY 类似代替 SO-8
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.017Ω; ID 6.4A; PowerPAK SO-8; PD 1.4W
PDF
SI7872DP-T1-E3 SI7872DP-T1-E3 Vishay Semiconductor 类似代替 SOIC-8
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.017Ω; ID 6.4A; PowerPAK SO-8; PD 1.4W
PDF
SI7872DP-T1-GE3 SI7872DP-T1-GE3 Vishay Semiconductor 类似代替
MOSFET N-CH D-S 30V 8-SOIC
PDF

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