Technical parameters/drain source resistance: 30.0 mΩ
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 1.40 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 6.30 A
Technical parameters/rated power (Max): 1.4 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7842DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET DL N-CH 30V PPAK 8-SOIC
|
||
SI7872DP-T1-E3
|
Vishay Intertechnology | 类似代替 | SO-8 |
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.017Ω; ID 6.4A; PowerPAK SO-8; PD 1.4W
|
||
SI7872DP-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.017Ω; ID 6.4A; PowerPAK SO-8; PD 1.4W
|
||
SI7872DP-T1-E3
|
VISHAY | 类似代替 | SO-8 |
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.017Ω; ID 6.4A; PowerPAK SO-8; PD 1.4W
|
||
SI7872DP-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.017Ω; ID 6.4A; PowerPAK SO-8; PD 1.4W
|
||
SI7872DP-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH D-S 30V 8-SOIC
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review