Technical parameters/drain source resistance: 0.03 Ω
Technical parameters/dissipated power: 1.4 W
Technical parameters/threshold voltage: 2.4 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/thermal resistance: 60℃/W (RθJA)
Technical parameters/rated power (Max): 1.4 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 5.99 mm
External dimensions/width: 5.15 mm
External dimensions/height: 1.07 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7272DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
VISHAY SI7272DP-T1-GE3 Dual MOSFET, Dual N Channel, 25A, 30V, 0.0076Ω, 10V, 1.2V
|
||
SI7272DP-T1-GE3
|
VISHAY | 类似代替 | PowerPAKSO-8 |
VISHAY SI7272DP-T1-GE3 Dual MOSFET, Dual N Channel, 25A, 30V, 0.0076Ω, 10V, 1.2V
|
||
SI7844DP-T1
|
Vishay Semiconductor | 功能相似 | SO |
Power Field-Effect Transistor, 6.4A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SOP-8
|
||
SI7844DP-T1
|
Vishay Siliconix | 功能相似 | SO |
Power Field-Effect Transistor, 6.4A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SOP-8
|
||
SI7844DP-T1-GE3
|
Vishay Siliconix | 完全替代 | SO-8 |
MOSFET DL N-CH 30V PPAK 8-SOIC
|
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