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Model SI7844DP-T1
Description Power Field-Effect Transistor, 6.4A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK, SOP-8
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Brand: Vishay Siliconix
Packaging SO
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6970) Minimum order quantity(1)
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Technical parameters/drain source resistance: 30.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.40 W

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 6.40 A

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO

External dimensions/packaging: SO

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7844DP-T1-E3 SI7844DP-T1-E3 VISHAY 功能相似 SO-8
MOSFET 2N-CH 30V 6.4A PPAK SO-8
PDF
SI7844DP-T1-E3 SI7844DP-T1-E3 Vishay Siliconix 功能相似 SO-8
MOSFET 2N-CH 30V 6.4A PPAK SO-8
PDF
SI7844DP-T1-E3 SI7844DP-T1-E3 Vishay Semiconductor 功能相似 SOIC-8
MOSFET 2N-CH 30V 6.4A PPAK SO-8
PDF
SI7844DP-T1-GE3 SI7844DP-T1-GE3 Vishay Siliconix 类似代替 SO-8
MOSFET DL N-CH 30V PPAK 8-SOIC
PDF

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