Technical parameters/dissipated power: 22 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 1100pF @15V(Vds)
Technical parameters/rated power (Max): 22 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 6.15 mm
External dimensions/width: 5.15 mm
External dimensions/height: 1.04 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7844DP-T1-E3
|
VISHAY | 类似代替 | SO-8 |
VISHAY SI7844DP-T1-E3 双路场效应管, MOSFET, 双N沟道, 10 A, 30 V, 22 mohm, 10 V, 2.4 V
|
||
SI7844DP-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
VISHAY SI7844DP-T1-E3 双路场效应管, MOSFET, 双N沟道, 10 A, 30 V, 22 mohm, 10 V, 2.4 V
|
||
SI7844DP-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
VISHAY SI7844DP-T1-E3 双路场效应管, MOSFET, 双N沟道, 10 A, 30 V, 22 mohm, 10 V, 2.4 V
|
||
SI7998DP-T1-GE3
|
Vishay Siliconix | 完全替代 | SO-8 |
SI7998DP-T1-GE3 Dual N-channel MOSFET Transistor, 15A, 21A, 30V, 8Pin PowerPAK SO
|
||
SI7998DP-T1-GE3
|
Vishay Semiconductor | 完全替代 |
SI7998DP-T1-GE3 Dual N-channel MOSFET Transistor, 15A, 21A, 30V, 8Pin PowerPAK SO
|
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