Technical parameters/dissipated power: 5W (Ta), 27.5W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 1465pF @15V(Vds)
Technical parameters/dissipated power (Max): 5W (Ta), 27.5W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7388DP-T1-E3
|
Vishay Siliconix | 功能相似 | PowerPAKSO-8 |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 12A; PowerPAK SO-8; PD 1.9W; -55de
|
||
SI7388DP-T1-E3
|
VISHAY | 功能相似 | SO |
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ω; ID 12A; PowerPAK SO-8; PD 1.9W; -55de
|
||
SI7388DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 30V 12A PPAK SO-8
|
||
SI7388DP-T1-GE3
|
VISHAY | 类似代替 | PowerPAK |
MOSFET N-CH 30V 12A PPAK SO-8
|
||
SI7388DP-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 30V 12A PPAK SO-8
|
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