Technical parameters/drain source resistance: 0.01 Ω
Technical parameters/dissipated power: 1.9 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.9W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAKSO-8
External dimensions/length: 5.99 mm
External dimensions/width: 5.15 mm
External dimensions/height: 1.07 mm
External dimensions/packaging: PowerPAKSO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7388DP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 30V 12A PPAK SO-8
|
||
SI7388DP-T1-GE3
|
VISHAY | 功能相似 | PowerPAK |
MOSFET N-CH 30V 12A PPAK SO-8
|
||
SI7388DP-T1-GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 30V 12A PPAK SO-8
|
|||
SI7392ADP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 30V 30A PPAK SO-8
|
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