Technical parameters/drain source resistance: 7.00 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 5.00 W
Technical parameters/drain source voltage (Vds): 30.0 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 12.0 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7388DP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 30V 12A PPAK SO-8
|
||
SI7388DP-T1-GE3
|
VISHAY | 功能相似 | PowerPAK |
MOSFET N-CH 30V 12A PPAK SO-8
|
||
SI7388DP-T1-GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 30V 12A PPAK SO-8
|
|||
SI7392ADP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 30V 30A PPAK SO-8
|
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