Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSSOP-8
External dimensions/packaging: TSSOP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6562CDQ-T1-GE3
|
Vishay Semiconductor | 完全替代 | TSSOP |
MOSFET N/P-CH 20V 6.7A 8-TSSOP
|
||
SI6562DQ-T1-E3
|
Vishay Semiconductor | 完全替代 | TSSOP |
MOSFET N/P-CH 20V 8-TSSOP
|
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