Technical parameters/number of pins: | 8 |
|
Technical parameters/drain source resistance: | 0.18 Ω |
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Technical parameters/polarity: | N-Channel, P-Channel |
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Technical parameters/dissipated power: | 1.6 W |
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Technical parameters/threshold voltage: | 600 mV |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | TSSOP |
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Dimensions/Packaging: | TSSOP |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6562DQ-T1-E3
|
Vishay Semiconductor | 类似代替 | TSSOP |
Trans MOSFET N/P-CH 20V 4.5A/3.5A 8Pin TSSOP T/R
|
||
SI6993DQ-T1-E3
|
Vishay Siliconix | 类似代替 | TSSOP-8 |
VISHAY SI6993DQ-T1-E3 双路场效应管, MOSFET, 双P沟道, -3.6 A, -30 V, 0.024 ohm, -10 V, -1 V
|
||
|
|
Vishay Intertechnology | 类似代替 | TSSOP-8 |
VISHAY SI6993DQ-T1-E3 双路场效应管, MOSFET, 双P沟道, -3.6 A, -30 V, 0.024 ohm, -10 V, -1 V
|
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