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Model SI6562DQ-T1-E3
Description Trans MOSFET N/P-CH 20V 4.5A/3.5A 8Pin TSSOP T/R
Product QR code
Brand: Vishay Semiconductor
Packaging TSSOP
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
8.86  yuan 8.86yuan
10+:
$ 10.6284
100+:
$ 10.0970
500+:
$ 9.7427
1000+:
$ 9.7250
2000+:
$ 9.6541
5000+:
$ 9.5656
7500+:
$ 9.4947
10000+:
$ 9.4593
Quantity
10+
100+
500+
1000+
2000+
Price
$10.6284
$10.0970
$9.7427
$9.7250
$9.6541
Price $ 10.6284 $ 10.0970 $ 9.7427 $ 9.7250 $ 9.6541
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9790) Minimum order quantity(10)
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Technical parameters/drain source resistance: 0.05 Ω

Technical parameters/polarity: N-Channel, P-Channel

Technical parameters/dissipated power: 1 W

Technical parameters/threshold voltage: 600 mV

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/leakage source breakdown voltage: 20.0 V

Technical parameters/breakdown voltage of gate source: ±12.0 V

Technical parameters/Continuous drain current (Ids): 4.50 A

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: TSSOP

External dimensions/packaging: TSSOP

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI6562CDQ-T1-GE3 SI6562CDQ-T1-GE3 Vishay Semiconductor 类似代替 TSSOP
VISHAY SI6562CDQ-T1-GE3 双路场效应管, MOSFET, N和P沟道, 6.7 A, 20 V, 0.18 ohm, 4.5 V, 600 mV
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