Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 1.5 W
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/Continuous drain current (Ids): 4A
Technical parameters/rise time: 60 ns
Technical parameters/rated power (Max): 1.05 W
Technical parameters/descent time: 35 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TSSOP-8
External dimensions/packaging: TSSOP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4403CDY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
||
SI4403CDY-T1-GE3
|
Vishay Intertechnology | 功能相似 |
Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
|||
SI4403CDY-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
||
TPS1100D
|
TI | 功能相似 | SOIC-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
||
TPS1100DR
|
TI | 功能相似 | SOIC-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
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