Technical parameters/drain source resistance: 0.065 Ω
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 1.1 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 4.20 A
Technical parameters/rise time: 35 ns
Technical parameters/thermal resistance: 90℃/W (RθJA)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1206
External dimensions/length: 3.1 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: 1206
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5513CDC-T1-GE3
|
VISHAY | 功能相似 | SMD-8 |
Trans MOSFET N/P-CH 20V 4A/2.4A
|
||
SI5513CDC-T1-GE3
|
Vishay Semiconductor | 功能相似 | 1206 |
Trans MOSFET N/P-CH 20V 4A/2.4A
|
||
SI5513CDC-T1-GE3
|
Vishay Siliconix | 功能相似 | SMD-8 |
Trans MOSFET N/P-CH 20V 4A/2.4A
|
||
SI5513DC-T1-GE3
|
VISHAY | 类似代替 | CHIP |
MOSFET N/P-CH 20V 3.1A 1206-8
|
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