Chip AI consultant
Technical parameters/drain source resistance: | 45mΩ,120mΩ |
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Technical parameters/polarity: | N-Channel, P-Channel |
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Technical parameters/dissipated power: | 1.7 W |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Continuous drain current (Ids): | 4A |
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Technical parameters/Input capacitance (Ciss): | 285pF @10V(Vds) |
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Technical parameters/rated power (Max): | 3.1 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3.1 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SMD-8 |
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Dimensions/Length: | 3.1 mm |
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Dimensions/Width: | 1.7 mm |
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Dimensions/Height: | 1.1 mm |
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Dimensions/Packaging: | SMD-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 3000 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5513CDC-T1-E3
|
Vishay Semiconductor | 完全替代 |
MOSFET 20V 4.0/3.7A 3.1W 55/150mohm @ 4.5V
|
|||
SI5513CDC-T1-E3
|
VISHAY | 完全替代 | 1206 |
MOSFET 20V 4.0/3.7A 3.1W 55/150mohm @ 4.5V
|
||
SI5513DC-T1-E3
|
VISHAY | 功能相似 | SMD-8 |
MOSFET N/P-CH 20V 3.1A 1206-8
|
||
SI5513DC-T1-E3
|
Vishay Siliconix | 功能相似 | 1206 |
MOSFET N/P-CH 20V 3.1A 1206-8
|
||
SI5513DC-T1-E3
|
Vishay Semiconductor | 功能相似 | 1206 |
MOSFET N/P-CH 20V 3.1A 1206-8
|
||
SI5513DC-T1-GE3
|
VISHAY | 类似代替 | CHIP |
MOSFET N/P-CH 20V 3.1A 1206-8
|
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