Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 285pF @10V(Vds)
Technical parameters/rated power (Max): 3.1 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/packaging: SMD-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5513CDC-T1-E3
|
Vishay Semiconductor | 完全替代 |
MOSFET 20V 4.0/3.7A 3.1W 55/150mohm @ 4.5V
|
|||
SI5513CDC-T1-E3
|
VISHAY | 完全替代 | 1206 |
MOSFET 20V 4.0/3.7A 3.1W 55/150mohm @ 4.5V
|
||
SI5513DC-T1-E3
|
VISHAY | 功能相似 | SMD-8 |
MOSFET N/P-CH 20V 3.1A 1206-8
|
||
SI5513DC-T1-E3
|
Vishay Siliconix | 功能相似 | 1206 |
MOSFET N/P-CH 20V 3.1A 1206-8
|
||
SI5513DC-T1-E3
|
Vishay Semiconductor | 功能相似 | 1206 |
MOSFET N/P-CH 20V 3.1A 1206-8
|
||
SI5513DC-T1-GE3
|
VISHAY | 类似代替 | CHIP |
MOSFET N/P-CH 20V 3.1A 1206-8
|
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