Technical parameters/drain source resistance: 0.222 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.3 W
Technical parameters/drain source voltage (Vds): -20.0 V
Technical parameters/Continuous drain current (Ids): -3.70 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.8 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1206
External dimensions/length: 3.1 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: 1206
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5853DC-T1-E3
|
Vishay Siliconix | 功能相似 | ChipFET-8 |
MOSFET 20V 3.6A 2.1W
|
||
SI5853DC-T1-E3
|
VISHAY | 功能相似 | CHIP |
MOSFET 20V 3.6A 2.1W
|
||
SI5855DC-T1-E3
|
Vishay Semiconductor | 类似代替 | 8 |
MOSFET P-CH 20V 2.7A 1206-8
|
||
SI5855DC-T1-E3
|
Vishay Intertechnology | 类似代替 | 1206 |
MOSFET P-CH 20V 2.7A 1206-8
|
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