Technical parameters/drain source resistance: 110 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.1W (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): -3.60 A
Technical parameters/dissipated power (Max): 1.1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: ChipFET-8
External dimensions/length: 3.05 mm
External dimensions/width: 1.65 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: ChipFET-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SCH1332
|
Sanyo Semiconductor | 功能相似 |
P-channel Silicon Mosfet
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SI5855CDC-T1-E3
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Vishay Siliconix | 功能相似 | SMD-8 |
Trans MOSFET P-CH 20V 2.5A 8Pin Chip FET T/R
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||
SI5855CDC-T1-E3
|
VISHAY | 功能相似 | 1206 |
Trans MOSFET P-CH 20V 2.5A 8Pin Chip FET T/R
|
||
SI5855CDC-T1-E3
|
Vishay Semiconductor | 功能相似 | 1206 |
Trans MOSFET P-CH 20V 2.5A 8Pin Chip FET T/R
|
||
SI5855DC-T1-E3
|
Vishay Semiconductor | 类似代替 | 8 |
MOSFET P-CH 20V 2.7A 1206-8
|
||
SI5855DC-T1-E3
|
Vishay Intertechnology | 类似代替 | 1206 |
MOSFET P-CH 20V 2.7A 1206-8
|
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