Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 2.7A
Technical parameters/rise time: 30 ns
Technical parameters/rated power (Max): 1.1 W
Technical parameters/descent time: 27 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: Chip
External dimensions/packaging: Chip
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SCH1332
|
Sanyo Semiconductor | 功能相似 |
P-channel Silicon Mosfet
|
|||
SI5855CDC-T1-E3
|
Vishay Siliconix | 功能相似 | SMD-8 |
Trans MOSFET P-CH 20V 2.5A 8Pin Chip FET T/R
|
||
SI5855CDC-T1-E3
|
VISHAY | 功能相似 | 1206 |
Trans MOSFET P-CH 20V 2.5A 8Pin Chip FET T/R
|
||
SI5855CDC-T1-E3
|
Vishay Semiconductor | 功能相似 | 1206 |
Trans MOSFET P-CH 20V 2.5A 8Pin Chip FET T/R
|
||
SI5855DC-T1-E3
|
Vishay Semiconductor | 类似代替 | 8 |
MOSFET P-CH 20V 2.7A 1206-8
|
||
SI5855DC-T1-E3
|
Vishay Intertechnology | 类似代替 | 1206 |
MOSFET P-CH 20V 2.7A 1206-8
|
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