Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 6.00 A
Technical parameters/Input capacitance (Ciss): 660pF @10V(Vds)
Technical parameters/rated power (Max): 10.4 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: PowerPAKR ChipFET? Dual
External dimensions/packaging: PowerPAKR ChipFET? Dual
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5517DU-T1-GE3
|
Vishay Siliconix | 类似代替 | PowerPAKR ChipFET? Dual |
MOSFET N/P-CH 20V 6A CHIPFET
|
||
SI5517DU-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N/P-CH 20V 6A CHIPFET
|
|||
SI5517DU-T1-GE3
|
Vishay Intertechnology | 类似代替 |
MOSFET N/P-CH 20V 6A CHIPFET
|
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