Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 520pF @10V(Vds)
Technical parameters/rated power (Max): 8.3 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: PowerPAKR ChipFET? Dual
External dimensions/packaging: PowerPAKR ChipFET? Dual
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5519DU-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N/P-CH 20V 6A CHIPFET
|
|||
SI5519DU-T1-GE3
|
Vishay Siliconix | 类似代替 | PowerPAKR ChipFET? Dual |
MOSFET N/P-CH 20V 6A CHIPFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review