Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/drain source voltage (Vds): 20.0 V
Technical parameters/Continuous drain current (Ids): 6.00 A
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5517DU-T1-GE3
|
Vishay Siliconix | 类似代替 | PowerPAKR ChipFET? Dual |
MOSFET N/P-CH 20V 6A CHIPFET
|
||
SI5517DU-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET N/P-CH 20V 6A CHIPFET
|
|||
SI5517DU-T1-GE3
|
Vishay Intertechnology | 类似代替 |
MOSFET N/P-CH 20V 6A CHIPFET
|
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