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Model SI5517DU-T1-GE3
Description N/P Channel MOSFET, Vishay Semiconductor # # MOSFET transistor, Vishay Semiconductor
Product QR code
Brand: Vishay Semiconductor
Packaging
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.8  yuan 1.8yuan
5+:
$ 2.4233
25+:
$ 2.2438
50+:
$ 2.1181
100+:
$ 2.0643
500+:
$ 2.0284
2500+:
$ 1.9835
5000+:
$ 1.9655
10000+:
$ 1.9386
Quantity
5+
25+
50+
100+
500+
Price
$2.4233
$2.2438
$2.1181
$2.0643
$2.0284
Price $ 2.4233 $ 2.2438 $ 2.1181 $ 2.0643 $ 2.0284
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7066) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.032 Ω

Technical parameters/polarity: N-Channel, P-Channel

Technical parameters/dissipated power: 8.3 W

Technical parameters/threshold voltage: 1 V

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): 7.20 A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 8.3 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

External dimensions/length: 3.08 mm

External dimensions/width: 1.98 mm

External dimensions/height: 0.85 mm

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI5519DU-T1-GE3 SI5519DU-T1-GE3 Vishay Semiconductor 类似代替
MOSFET N/P-CH 20V 6A CHIPFET
PDF
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