Technical parameters/dissipated power: 3.1W (Ta), 31W (Tc)
Technical parameters/Input capacitance (Ciss): 1400pF @15V(Vds)
Technical parameters/dissipated power (Max): 3.1W (Ta), 31W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: PowerPAK-ChipFET-8
External dimensions/length: 3 mm
External dimensions/width: 1.8 mm
External dimensions/height: 0.75 mm
External dimensions/packaging: PowerPAK-ChipFET-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7619DN-T1-GE3
|
Vishay Siliconix | 功能相似 | 1212-8 |
SI7619DN-T1-GE3 P-channel MOSFET Transistor, 24A, 30V, 8Pin PowerPAK 1212
|
||
SI7619DN-T1-GE3
|
VISHAY | 功能相似 | PowerPAK-1212-8 |
SI7619DN-T1-GE3 P-channel MOSFET Transistor, 24A, 30V, 8Pin PowerPAK 1212
|
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