Technical parameters/dissipated power: | 3.5W (Ta), 27.8W (Tc) |
|
Technical parameters/Input capacitance (Ciss): | 1350pF @15V(Vds) |
|
Technical parameters/dissipated power (Max): | 3.5W (Ta), 27.8W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | 1212-8 |
|
Dimensions/Packaging: | 1212-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFHM9391TRPBF
|
Infineon | 功能相似 | Power-33 |
INFINEON IRFHM9391TRPBF 晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V 新
|
||
IRFHM9391TRPBF
|
International Rectifier | 功能相似 | PQFN-8 |
INFINEON IRFHM9391TRPBF 晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V 新
|
||
IRFHM9391TRPBF
|
IFC | 功能相似 |
INFINEON IRFHM9391TRPBF 晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V 新
|
|||
SI5419DU-T1-GE3
|
Vishay Siliconix | 功能相似 | PowerPAK-ChipFET-8 |
MOSFET P-CH 30V 12A PPAK CHIPFET
|
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