Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0175 Ω
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 3.5 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 10.5A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 1350pF @15V(Vds)
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAK-1212-8
External dimensions/length: 3.15 mm
External dimensions/width: 3.15 mm
External dimensions/height: 1.07 mm
External dimensions/packaging: PowerPAK-1212-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFHM9391TRPBF
|
Infineon | 功能相似 | Power-33 |
INFINEON IRFHM9391TRPBF 晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V 新
|
||
IRFHM9391TRPBF
|
International Rectifier | 功能相似 | PQFN-8 |
INFINEON IRFHM9391TRPBF 晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V 新
|
||
IRFHM9391TRPBF
|
IFC | 功能相似 |
INFINEON IRFHM9391TRPBF 晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V 新
|
|||
SI5419DU-T1-GE3
|
Vishay Siliconix | 功能相似 | PowerPAK-ChipFET-8 |
MOSFET P-CH 30V 12A PPAK CHIPFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review