Technical parameters/drain source resistance: 0.05 Ω
Technical parameters/polarity: P-Channel, Dual P-Channel
Technical parameters/dissipated power: 1.1 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 6.50 A
Technical parameters/thermal resistance: 91℃/W (RθJA)
Technical parameters/rated power (Max): 1.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTMD6P02R2
|
ON Semiconductor | 功能相似 | SOIC-8 |
功率MOSFET 6安培, 20伏P沟道SO- 8 ,双 Power MOSFET 6 Amps, 20 Volts P-Channel SO-8, Dual
|
||
NTMD6P02R2G
|
ON Semiconductor | 功能相似 | SOIC-8 |
P 通道 MOSFET,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
|
||
SI4943CDY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
VISHAY SI4943CDY-T1-GE3 双路场效应管, MOSFET, 双P沟道, -8 A, -20 V, 0.0275 ohm, -4.5 V, -1 V
|
||
SI4943CDY-T1-GE3
|
Vishay Intertechnology | 类似代替 | SO-8 |
VISHAY SI4943CDY-T1-GE3 双路场效应管, MOSFET, 双P沟道, -8 A, -20 V, 0.0275 ohm, -4.5 V, -1 V
|
||
SI4943CDY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
VISHAY SI4943CDY-T1-GE3 双路场效应管, MOSFET, 双P沟道, -8 A, -20 V, 0.0275 ohm, -4.5 V, -1 V
|
||
SI4963BDY-T1-GE3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
Trans MOSFET P-CH 20V 4.9A 8Pin SOIC N T/R
|
||
SI4963BDY-T1-GE3
|
Vishay Semiconductor | 完全替代 |
Trans MOSFET P-CH 20V 4.9A 8Pin SOIC N T/R
|
|||
SI4963BDY-T1-GE3
|
VISHAY | 完全替代 | SOIC-8 |
Trans MOSFET P-CH 20V 4.9A 8Pin SOIC N T/R
|
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