Technical parameters/rated voltage (DC): -20.0 V
Technical parameters/rated current: -6.00 A
Technical parameters/drain source resistance: 27.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 20.0 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 6.00 A
Technical parameters/rise time: 20.0 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTMD6P02R2G
|
ON Semiconductor | 类似代替 | SOIC-8 |
P 通道 MOSFET，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
||
SI4963BDY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
TRANSISTOR 4900mA, 20V, 2Channel, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
||
SI4963BDY-T1-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
TRANSISTOR 4900mA, 20V, 2Channel, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
|
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