Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0275 Ω
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 3.1 W
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -50℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Computers & Computer Peripherals, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4963BDY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
VISHAY SI4963BDY-T1-E3 双路场效应管, MOSFET, 双P沟道, -4.9 A, -20 V, 0.025 ohm, -2.5 V, -1.4 V
|
||
SI4963BDY-T1-E3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
VISHAY SI4963BDY-T1-E3 双路场效应管, MOSFET, 双P沟道, -4.9 A, -20 V, 0.025 ohm, -2.5 V, -1.4 V
|
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