Technical parameters/drain source resistance: 29 mΩ
Technical parameters/dissipated power: 1100 mW
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 15 ns
Technical parameters/rated power (Max): 1.1 W
Technical parameters/descent time: 90 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4973DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET 30V 7.6A 2W 23mohm @ 10V
|
||
|
|
VISHAY | 类似代替 | SOP-8 |
MOSFET 30V 7.6A 2W 23mohm @ 10V
|
||
SI4973DY-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET 30V 7.6A 2W 23mohm @ 10V
|
|||
|
|
Zetex | 功能相似 | SOIC-8 |
ZXMP3A17 系列 30 V 0.07 Ohm 双 P 沟道 增强模式 MOSFET - SOIC-8
|
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