Technical parameters/drain source resistance: 3.00 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.60 W
Technical parameters/leakage source breakdown voltage: 12.0 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 25.0 A
Technical parameters/rise time: 41 ns
Technical parameters/descent time: 115 ns
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4838BDY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET N-CH 12V 34A 8-SOIC
|
||
SI4838BDY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET N-CH 12V 34A 8-SOIC
|
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