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Model SI4838BDY-T1-GE3
Description NChannel 12-V (D-S) MOSFET N-Channel 12-V (D-S) MOSFET
Product QR code
Brand: VISHAY
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.93  yuan 1.93yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2780) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

2.1 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2.5 W

 

Technical parameters/threshold voltage:

400 mV

 

Technical parameters/drain source voltage (Vds):

12 V

 

Technical parameters/Continuous drain current (Ids):

34A

 

Technical parameters/Input capacitance (Ciss):

5760pF @6V(Vds)

 

Technical parameters/rated power (Max):

5.7 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2500 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Minimum Packaging:

2500

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4836DY-T1-E3 SI4836DY-T1-E3 Vishay Semiconductor 类似代替 SO
MOSFET N-CH 12V 17A 8-SOIC
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