Technical parameters/drain source resistance: 2.1 mΩ
Technical parameters/dissipated power: 5.7 W
Technical parameters/threshold voltage: 400 mV
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/Input capacitance (Ciss): 5760pF @6V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta), 5.7W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4836DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SO |
MOSFET N-CH 12V 17A 8-SOIC
|
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