Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Other/FET types: 2N-Channel
Other/Rds On (Max) @ Id, Vgs: 9.5 mOhms @ 12.2A,10V
Other/continuous drain current Id: 9.3A
Other/drain source voltage Vds: 30V
Other/working temperature: -55℃~150℃
Other/Packaging/Shell: 8-SOIC
Other/Vgs (th): 3V @ 250uA
Other/Pd - power dissipation (Max): 1.3W
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4922BDY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
MOSFET N-CH DUAL 30V 8A 8-SOIC
|
||
SI4922BDY-T1-E3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET N-CH DUAL 30V 8A 8-SOIC
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review