Technical parameters/drain source resistance: 30 mΩ
Technical parameters/dissipated power: 2.5W (Ta), 5.6W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 1960pF @15V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 5.6W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DMG4435SSS-13
|
Diodes | 功能相似 | SOIC-8 |
DMG4435SSS 系列 30 V 20 mOhm P 沟道 增强型 Mosfet - SOP-8
|
||
SI4835DDY-T1-GE3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET 30V 13A 5.6W 1.8mohm @ 10V
|
||
SI4835DDY-T1-GE3
|
Vishay Intertechnology | 完全替代 | SOIC-8 |
MOSFET 30V 13A 5.6W 1.8mohm @ 10V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review