Technical parameters/dissipated power: | 2.5W (Ta), 5.6W (Tc) |
|
Technical parameters/Input capacitance (Ciss): | 1960pF @15V(Vds) |
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Technical parameters/dissipated power (Max): | 2.5W (Ta), 5.6W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DMG4435SSS-13
|
Diodes | 功能相似 | SOIC-8 |
DMG4435SSS 系列 30 V 20 mOhm P 沟道 增强型 Mosfet - SOP-8
|
||
SI4835DDY-T1-E3
|
Vishay Semiconductor | 完全替代 | SOIC-8 |
Trans MOSFET P-CH 30V 8.7A 8Pin SOIC N T/R
|
||
SI4835DDY-T1-E3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
Trans MOSFET P-CH 30V 8.7A 8Pin SOIC N T/R
|
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