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Model DMG4435SSS-13

Description DMG4435SSS 系列 30 V 20 mOhm P 沟道增强型 Mosfet - SOP-8

Brand: Diodes

Packaging SOIC-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.013 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	2.5 W
Technical parameters/threshold voltage:	1.7 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	7.3A
Technical parameters/rise time:	12.7 ns
Technical parameters/forward voltage (Max):	1 V
Technical parameters/Input capacitance (Ciss):	1614pF @15V(Vds)
Technical parameters/rated power (Max):	1.3 W
Technical parameters/descent time:	22.8 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2.5W (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Packaging:	SOIC-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99