Technical parameters/drain source resistance: 35.0 mΩ
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 2.40 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): -6.50 A to 6.50 A
Technical parameters/rated power (Max): 2.4 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2400 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOP
External dimensions/packaging: SOP
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4542DY
|
Vishay Siliconix | 类似代替 | SOT |
Mosfet, Dual, Np, So-8
|
||
SI4542DY
|
Vishay Intertechnology | 类似代替 |
Mosfet, Dual, Np, So-8
|
|||
SI4542DY-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET 30V 6.9/6.1A 2W
|
||
SI4542DY-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET 30V 6.9/6.1A 2W
|
|||
SI4544DY-T1
|
Vishay Semiconductor | 类似代替 | SO |
Trans MOSFET N/P-CH 30V 6.5A/5.7A 8-Pin SOIC N T/R
|
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