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Model SI4542DY-E3
Description MOSFET 30V 6.9/6.1A 2W
Product QR code
Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2378) Minimum order quantity(1)
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Technical parameters/drain source resistance:

25.0 mΩ

 

Technical parameters/polarity:

N-Channel, P-Channel

 

Technical parameters/dissipated power:

2.00 W

 

Technical parameters/Leakage source breakdown voltage:

30.0 V

 

Technical parameters/Continuous drain current (Ids):

6.90 A

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SO-8

 

Dimensions/Length:

4.9 mm

 

Dimensions/Width:

3.9 mm

 

Dimensions/Height:

1.75 mm

 

Dimensions/Packaging:

SO-8

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4542DY SI4542DY Vishay Siliconix 功能相似 SOT
FAIRCHILD SEMICONDUCTOR SI4542DY 双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.5 V
SI4542DY SI4542DY Vishay Intertechnology 功能相似
FAIRCHILD SEMICONDUCTOR SI4542DY 双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.5 V
PDF
SI4544DY-T1-E3 SI4544DY-T1-E3 Vishay Siliconix 类似代替 SOIC-8
MOSFET N/P-CH 30V 8-SOIC
PDF
SI4544DY-T1-E3 SI4544DY-T1-E3 VISHAY 类似代替 SOP
MOSFET N/P-CH 30V 8-SOIC
PDF

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