Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Delete 동업체: Vishay
Other/Delete 품카테 High speed: MOSFETs
Other/Delete: General Purpose MOSFETs
Other/궟동: Single Quad Drain Triple Source
Other/Case/Package: SOIC N
Other/Soft 랜イ동터극동: P-Channel
Other/ハ레イ?동항복압: 20 V
Other/Link Files 레イ류: 10 A
Other/력발산: 1500 mW
Other/저항 Drain Source RDS (on): 0.00875 Ohm @ 4.5 V
Other/Typical 하강: 170 ns
Other/Typical 상승: 90 ns
Other/표준오프い Contact Us: 350 ns
Other/ị동: REEL
Other/게イSoft - ?동항복압: 8 V
Other/동대작동온도: 150 C
Other/π소작동온도: 55 C
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4421DY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
Trans MOSFET P-CH 20V 10A 8Pin SOIC N T/R
|
||
SI4421DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
Trans MOSFET P-CH 20V 10A 8Pin SOIC N T/R
|
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