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Model SI4421DY-T1-GE3
Description VISHAY SI4421DY-T1-GE3 Transistor, MOSFET, trench FET, P-channel, -10 A, -20 V, 0.007 ohm, -4.5 V, -800 mV new
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
6.98  yuan 6.98yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5132) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.0135 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

1.5 W

 

Technical parameters/drain source voltage (Vds):

-20.0 V

 

Technical parameters/Continuous drain current (Ids):

-14.0 A

 

Technical parameters/rise time:

90 ns

 

Technical parameters/descent time:

170 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4421DY-T1 SI4421DY-T1 Vishay Siliconix 功能相似 SOIC-8
MOSFET 20V 14A 1.5W
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SI4421DY-T1-E3 SI4421DY-T1-E3 Vishay Siliconix 类似代替 SOIC-8
Trans MOSFET P-CH 20V 10A 8Pin SOIC N T/R
PDF
SI4421DY-T1-E3 SI4421DY-T1-E3 Vishay Intertechnology 类似代替 SOIC
Trans MOSFET P-CH 20V 10A 8Pin SOIC N T/R
PDF
SI4477DY-T1-GE3 SI4477DY-T1-GE3 Vishay Siliconix 类似代替 SOIC-8
VISHAY SI4477DY-T1-GE3 晶体管, MOSFET, P沟道, -26.6 A, -20 V, 0.0051 ohm, -4.5 V, -1.5 V
PDF

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