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Model SI4477DY-T1-GE3
Description VISHAY SI4477DY-T1-GE3 MOSFET Transistor, P Channel, -26.6A, -20V, 0.0051Ω, -4.5V, -1.5V
Product QR code
Brand: Vishay Siliconix
Packaging SOIC-8
Delivery time
Packaging method
Standard packaging quantity 1
4.48  yuan 4.48yuan
5+:
$ 6.0534
25+:
$ 5.6050
50+:
$ 5.2911
100+:
$ 5.1566
500+:
$ 5.0669
2500+:
$ 4.9548
5000+:
$ 4.9100
10000+:
$ 4.8427
Quantity
5+
25+
50+
100+
500+
Price
$6.0534
$5.6050
$5.2911
$5.1566
$5.0669
Price $ 6.0534 $ 5.6050 $ 5.2911 $ 5.1566 $ 5.0669
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9371) Minimum order quantity(5)
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Technical parameters/dissipated power: 3W (Ta), 6.6W (Tc)

Technical parameters/Input capacitance (Ciss): 4600pF @10V(Vds)

Technical parameters/dissipated power (Max): 3W (Ta), 6.6W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4453DY-T1-E3 SI4453DY-T1-E3 Vishay Siliconix 功能相似 SO-8
MOSFET P-CH 12V 10A 8-SOIC
PDF
SI4453DY-T1-GE3 SI4453DY-T1-GE3 Vishay Semiconductor 功能相似
MOSFET P-CH 12V 10A 8-SOIC
PDF

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