Technical parameters/dissipated power: 1.5W (Ta)
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/dissipated power (Max): 1.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4477DY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
VISHAY SI4477DY-T1-GE3 MOSFET Transistor, P Channel, -26.6A, -20V, 0.0051Ω, -4.5V, -1.5V
|
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