Technical parameters/drain source resistance: 13.5 mΩ
Technical parameters/dissipated power: 1.5W (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/dissipated power (Max): 1.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4421DY-T1
|
Vishay Siliconix | 功能相似 | SOIC-8 |
MOSFET 20V 14A 1.5W
|
||
SI4421DY-T1-E3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
Trans MOSFET P-CH 20V 10A 8Pin SOIC N T/R
|
||
|
|
Vishay Intertechnology | 类似代替 | SOIC |
Trans MOSFET P-CH 20V 10A 8Pin SOIC N T/R
|
||
SI4477DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
VISHAY SI4477DY-T1-GE3 晶体管, MOSFET, P沟道, -26.6 A, -20 V, 0.0051 ohm, -4.5 V, -1.5 V
|
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