Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.006 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.5 W
Technical parameters/threshold voltage: 400 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): -14.0 A
Technical parameters/rise time: 165 ns
Technical parameters/rated power (Max): 1.5 W
Technical parameters/descent time: 210 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6575
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6575 晶体管, MOSFET, P沟道, -10 A, -20 V, 0.0085 ohm, -4.5 V, -600 mV
|
||
SI4423DY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SO-8 |
Trans MOSFET P-CH 20V 10A 8Pin SOIC N T/R
|
||
SI4423DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
Trans MOSFET P-CH 20V 10A 8Pin SOIC N T/R
|
||
SI4477DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
VISHAY SI4477DY-T1-GE3 晶体管, MOSFET, P沟道, -26.6 A, -20 V, 0.0051 ohm, -4.5 V, -1.5 V
|
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