Technical parameters/polarity: P-Channel
Technical parameters/drain source voltage (Vds): -20.0 V
Technical parameters/Continuous drain current (Ids): -10.0 A
Technical parameters/rise time: 165 ns
Technical parameters/descent time: 210 ns
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4423DY-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET P-CH 20V 10A 8-SOIC
|
||
|
|
Vishay Intertechnology | 类似代替 | SO-8 |
MOSFET P-CH 20V 10A 8-SOIC
|
||
SI4423DY-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
MOSFET P-CH 20V 10A 8-SOIC
|
||
SI4423DY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET P-CH 20V 10A 8-SOIC
|
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