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Model SI3456BDV-T1-GE3
Description MOSFET N-CH 30V 4.5A 6-TSOP
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Brand: Vishay Siliconix
Packaging TSOT-23-6
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3136) Minimum order quantity(1)
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Technical parameters/dissipated power: 1.1W (Ta)

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/dissipated power (Max): 1.1W (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TSOT-23-6

External dimensions/packaging: TSOT-23-6

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI3456BDV-T1-E3 SI3456BDV-T1-E3 VISHAY 类似代替 TSOP
MOSFET N-CH 30V 4.5A 6-TSOP
SI3456BDV-T1-E3 SI3456BDV-T1-E3 Vishay Siliconix 类似代替 TSOT-23-6
MOSFET N-CH 30V 4.5A 6-TSOP
PDF
SI3456DDV-T1-GE3 SI3456DDV-T1-GE3 Vishay Intertechnology 类似代替 TSOP
MOSFET N-CH 30V 6.3A 6-TSOP
SI3456DDV-T1-GE3 SI3456DDV-T1-GE3 VISHAY 类似代替 TSOP-6
MOSFET N-CH 30V 6.3A 6-TSOP
PDF

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