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Model SI3458BDV-T1-E3
Description NChannel 60-V (D-S) MOSFET N-Channel 60-V (D-S) MOSFET
Product QR code
Brand: VISHAY
Packaging TSOP-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.9  yuan 0.9yuan
10+:
$ 1.2164
50+:
$ 1.1533
100+:
$ 1.1082
300+:
$ 1.0812
500+:
$ 1.0542
1000+:
$ 1.0271
2500+:
$ 0.9866
5000+:
$ 0.9776
Quantity
10+
50+
100+
300+
500+
Price
$1.2164
$1.1533
$1.1082
$1.0812
$1.0542
Price $ 1.2164 $ 1.1533 $ 1.1082 $ 1.0812 $ 1.0542
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4488) Minimum order quantity(10)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.082 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2 W

Technical parameters/threshold voltage: 3 V

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/Continuous drain current (Ids): 4.10 A

Technical parameters/Input capacitance (Ciss): 350pF @30V(Vds)

Technical parameters/descent time: 10 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2000 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: TSOP-6

External dimensions/packaging: TSOP-6

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Other/Minimum Packaging: 3000

Other/Manufacturing Applications: Power management, industrial, portable equipment

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 Vishay Siliconix 功能相似 TSOT-23-6
VISHAY SI3458BDV-T1-GE3 场效应管, MOSFET, N沟道, 3.2A, 60V, 2W
PDF
SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 Vishay Semiconductor 功能相似 TSOP-6
VISHAY SI3458BDV-T1-GE3 场效应管, MOSFET, N沟道, 3.2A, 60V, 2W
PDF
SI3477DV-T1-GE3 SI3477DV-T1-GE3 Vishay Semiconductor 类似代替 TSOP
P沟道12 V （D -S ）的MOSFET P-Channel 12 V (D-S) MOSFET
PDF
SI3477DV-T1-GE3 SI3477DV-T1-GE3 Vishay Siliconix 类似代替 TSOT-23-6
P沟道12 V （D -S ）的MOSFET P-Channel 12 V (D-S) MOSFET
PDF
SI3477DV-T1-GE3 SI3477DV-T1-GE3 Vishay Intertechnology 类似代替 TSOP-6
P沟道12 V （D -S ）的MOSFET P-Channel 12 V (D-S) MOSFET
PDF
SI3477DV-T1-GE3 SI3477DV-T1-GE3 VISHAY 类似代替 TSOP-6
P沟道12 V （D -S ）的MOSFET P-Channel 12 V (D-S) MOSFET
PDF

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