Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.082 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 3 V
Technical parameters/input capacitance: 350pF @30V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 3.20 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP-6
External dimensions/length: 3.1 mm
External dimensions/height: 1 mm
External dimensions/packaging: TSOP-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3458BDV-T1-E3
|
Vishay Semiconductor | 功能相似 | TSOP |
TRANSISTOR 3200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
|
||
SI3458BDV-T1-E3
|
VISHAY | 功能相似 | TSOP-6 |
TRANSISTOR 3200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
|
||
SI3458BDV-T1-GE3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
VISHAY SI3458BDV-T1-GE3 场效应管, MOSFET, N沟道, 3.2A, 60V, 2W
|
||
SI3458BDV-T1-GE3
|
Vishay Semiconductor | 功能相似 | TSOP-6 |
VISHAY SI3458BDV-T1-GE3 场效应管, MOSFET, N沟道, 3.2A, 60V, 2W
|
||
SI3458DV-T1-E3
|
Vishay Semiconductor | 类似代替 | TSOP |
MOSFET N-CH 60V 3.2A 6-TSOP
|
||
SI3458DV-T1-E3
|
VISHAY | 类似代替 | TSOP |
MOSFET N-CH 60V 3.2A 6-TSOP
|
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