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Model SI3458BDV-T1-E3
Description VISHAY SI3458BDV-T1-E3 Field effect transistor, MOSFET, N-channel, 60V, 4.1A, TSOP
Product QR code
Brand: Vishay Semiconductor
Packaging TSOP
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.79  yuan 1.79yuan
5+:
$ 2.4206
25+:
$ 2.2413
50+:
$ 2.1157
100+:
$ 2.0620
500+:
$ 2.0261
2500+:
$ 1.9813
5000+:
$ 1.9633
10000+:
$ 1.9364
Quantity
5+
25+
50+
100+
500+
Price
$2.4206
$2.2413
$2.1157
$2.0620
$2.0261
Price $ 2.4206 $ 2.2413 $ 2.1157 $ 2.0620 $ 2.0261
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1899) Minimum order quantity(5)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.082 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2 W

Technical parameters/threshold voltage: 3 V

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/Continuous drain current (Ids): 4.10 A

Technical parameters/Input capacitance (Ciss): 350pF @30V(Vds)

Technical parameters/descent time: 10 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2000 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: TSOP

External dimensions/height: 1 mm

External dimensions/packaging: TSOP

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Other/Manufacturing Applications: Power Management, Industrial, Portable Devices

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 Vishay Siliconix 功能相似 TSOT-23-6
VISHAY SI3458BDV-T1-GE3 场效应管, MOSFET, N沟道, 3.2A, 60V, 2W
PDF
SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 Vishay Semiconductor 功能相似 TSOP-6
VISHAY SI3458BDV-T1-GE3 场效应管, MOSFET, N沟道, 3.2A, 60V, 2W
PDF
SI3477DV-T1-GE3 SI3477DV-T1-GE3 Vishay Semiconductor 类似代替 TSOP
P沟道12 V （D -S ）的MOSFET P-Channel 12 V (D-S) MOSFET
PDF
SI3477DV-T1-GE3 SI3477DV-T1-GE3 Vishay Siliconix 类似代替 TSOT-23-6
P沟道12 V （D -S ）的MOSFET P-Channel 12 V (D-S) MOSFET
PDF
SI3477DV-T1-GE3 SI3477DV-T1-GE3 Vishay Intertechnology 类似代替 TSOP-6
P沟道12 V （D -S ）的MOSFET P-Channel 12 V (D-S) MOSFET
PDF
SI3477DV-T1-GE3 SI3477DV-T1-GE3 VISHAY 类似代替 TSOP-6
P沟道12 V （D -S ）的MOSFET P-Channel 12 V (D-S) MOSFET
PDF

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